Table 1

Energy level and resistivity of CZTSe NC thin films before and after ligand exchange by 550°C selenization
Samples ρ (Ω cm) ELUMO (eV) EHOMO (eV) Egap (eV)a
Before exchange (550°C) 3.09 −3.95 −5.57 1.62
After exchange (550°C) 0.17 −4.37 −5.91 1.54

aDetermined by CV, |E'ox − E'red|.

Wang et al.

Wang et al. Nanoscale Research Letters 2014 9:262   doi:10.1186/1556-276X-9-262

Open Data