Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer
1 Department of Physical Electronics, Tokyo Institute of Technology, 152-8552 Meguro-ku, Tokyo, Japan
2 Photovoltaics Research Center (PVREC), Tokyo Institute of Technology, 152-8552 Meguro-ku, Tokyo, Japan
Nanoscale Research Letters 2014, 9:246 doi:10.1186/1556-276X-9-246Published: 20 May 2014
The solar cell structure of n-type poly-silicon/5-nm-diameter silicon nanocrystals embedded in an amorphous silicon oxycarbide matrix (30 layers)/p-type hydrogenated amorphous silicon/Al electrode was fabricated on a quartz substrate. An open-circuit voltage and a fill factor of 518 mV and 0.51 in the solar cell were obtained, respectively. The absorption edge of the solar cell was 1.49 eV, which corresponds to the optical bandgap of the silicon nanocrystal materials, suggesting that it is possible to fabricate the solar cells with silicon nanocrystal materials, whose bandgaps are wider than that of crystalline silicon.
85.35.Be; 84.60.Jt; 78.67.Bf