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Open Access Nano Express

Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy

Yi Gu1, Kai Wang1, Haifei Zhou1, Yaoyao Li1, Chunfang Cao1, Liyao Zhang1, Yonggang Zhang1, Qian Gong1* and Shumin Wang12*

Author Affiliations

1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

2 Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 41296, Sweden

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Nanoscale Research Letters 2014, 9:24  doi:10.1186/1556-276X-9-24

Published: 13 January 2014

Abstract

InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for higher Bi contents. The bandgap was measured by optical absorption, and the bandgap reduction caused by the Bi incorporation was estimated to be about 56 meV/Bi%. Strong and broad photoluminescence signals were observed at room temperature for samples with xBi < 2.4%. The PL peak position varies from 1.4 to 1.9 μm, far below the measured InPBi bandgap.

Keywords:
InPBi; HRXRD; Absorption; Photoluminescence; Molecular beam epitaxy