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Site-selective substitutional doping with atomic precision on stepped Al (111) surface by single-atom manipulation

Chang Chen1, Jinhu Zhang1, Guofeng Dong1, Hezhu Shao1, Bo-yuan Ning1, Li Zhao2, Xi-jing Ning3 and Jun Zhuang1*

Author Affiliations

1 Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China

2 State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433, China

3 Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Department of Nuclear Science and Technology, Fudan University, Shanghai 200433, China

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Nanoscale Research Letters 2014, 9:235  doi:10.1186/1556-276X-9-235

Published: 13 May 2014


In fabrication of nano- and quantum devices, it is sometimes critical to position individual dopants at certain sites precisely to obtain the specific or enhanced functionalities. With first-principles simulations, we propose a method for substitutional doping of individual atom at a certain position on a stepped metal surface by single-atom manipulation. A selected atom at the step of Al (111) surface could be extracted vertically with an Al trimer-apex tip, and then the dopant atom will be positioned to this site. The details of the entire process including potential energy curves are given, which suggests the reliability of the proposed single-atom doping method.

Single-atom doping; Substitutional; Single-atom manipulation; Atomic precision; Metal surface