Figure 2.

Compositional distribution in the GaAsBi layers. HAADF images taken along the [110] pole of samples (a) S100 and (b) S25. The normalized HAADF intensity profiles (c) and point EDX measurements (d) performed along the growth direction of both samples, respectively.

Reyes et al. Nanoscale Research Letters 2014 9:23   doi:10.1186/1556-276X-9-23
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