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Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

Sefer Bora Lisesivdin12*, Nadir Ali Khan15, Simone Mazzucato1, Naci Balkan1, Michael John Adams1, Ville-Markus Korpijärvi3, Mircea Guina3, Gabor Mezosi4 and Marc Sorel4

Author Affiliations

1 School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park CO4 3SQ, UK

2 Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, Ankara 06500, Turkey

3 Optoelectronics Research Centre (ORC), Tampere University of Technology, P.O. Box 692, Tampere 33101, Finland

4 School of Engineering, University of Glasgow, Glasgow GG12 8QQ, UK

5 Kohat University of Science and Technology (KUST), Kohat, Khyber Pakhtoonkhwa, Pakistan

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Nanoscale Research Letters 2014, 9:22  doi:10.1186/1556-276X-9-22

Published: 13 January 2014


We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain.

Dilute nitride; Optical injection; Gain; Vertical cavity semiconductor optical amplifiers