Carrier trapping and escape times in p-i-n GaInNAs MQW structures
School of Computer Science and Electronic Engineering, University of Essex, CO4 3SQ Colchester, UK
Nanoscale Research Letters 2014, 9:21 doi:10.1186/1556-276X-9-21Published: 13 January 2014
We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structures, in terms of charge accumulation and resonance tunnelling.