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Open Access Nano Express

Carrier trapping and escape times in p-i-n GaInNAs MQW structures

Hagir M Khalil* and Naci Balkan

Author Affiliations

School of Computer Science and Electronic Engineering, University of Essex, CO4 3SQ Colchester, UK

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Nanoscale Research Letters 2014, 9:21  doi:10.1186/1556-276X-9-21

Published: 13 January 2014

Abstract

We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structures, in terms of charge accumulation and resonance tunnelling.

Keywords:
GaInNAs/GaAs; capture rates; resonant tunnelling; p-i-n multiple quantum wells