A preparation approach of exploring cluster ion implantation: from ultra-thin carbon film to graphene
Key Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072, China
Nanoscale Research Letters 2014, 9:205 doi:10.1186/1556-276X-9-205Published: 2 May 2014
Based on the extensive application of 2 × 1.7MV Tandetron accelerator, a low-energy cluster chamber has been built to explore for synthesizing graphene. Raman spectrum and atomic force microscopy (AFM) show that an amorphous carbon film in nanometer was deposited on the silicon by C4 cluster implantation. And we replaced the substrate with Ni/SiO2/Si and measured the thickness of Ni film by Rutherford backscattering spectrometry (RBS). Combined with suitable anneal conditions, these samples implanted by various small carbon clusters were made to grow graphene. Results from Raman spectrum reveal that few-layer graphene were obtained and discuss whether IG/I2D can contribute to explain the relationship between the number of graphene layers and cluster implantation dosage.