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Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi

Simone Mazzucato*, Henri Lehec, Helene Carrère, Hajer Makhloufi, Alexandre Arnoult, Chantal Fontaine, Thierry Amand and Xavier Marie

Nanoscale Research Letters 2014, 9:19  doi:10.1186/1556-276X-9-19

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Errata corrige

S Mazzucato   (2015-01-22 11:02)  INSA

Investigated samples were grown on standard GaAs buffer layer grown at 580°C.

Therefore, in the section Methods, the sentence

"... grown on a low-temperature (LT)-grown GaAs buffer layer ..."

has to be replaced by

"... grown on a GaAs buffer layer grown at 580°C ..."

This minor change does not affect the rest and the results of the paper

Competing interests

None declared


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