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Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi

Simone Mazzucato1*, Henri Lehec1, Helene Carrère1, Hajer Makhloufi23, Alexandre Arnoult23, Chantal Fontaine23, Thierry Amand1 and Xavier Marie1

Author Affiliations

1 LPCNO, INSA-UPS-CNRS, Université de Toulouse, 135 Avenue de Rangueil, Toulouse F-31400, France

2 LAAS-CNRS, 7 Avenue du Colonel Roche, Toulouse F-31400, France

3 Université de Toulouse, 15 rue des Lois, Toulouse F-31400, France

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Nanoscale Research Letters 2014, 9:19  doi:10.1186/1556-276X-9-19

Published: 13 January 2014


The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffraction (HR-XRD). The results are well interpreted by carrier trapping and recombination mechanisms involving the Bi-related localized levels. Clear distinction between the localized and delocalized regime was observed in the spectral and temporal photoluminescence emission.

Dilute bismides; Carrier localization; Exciton dynamics; GaAsBi, S-shape