Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi
1 LPCNO, INSA-UPS-CNRS, Université de Toulouse, 135 Avenue de Rangueil, Toulouse F-31400, France
2 LAAS-CNRS, 7 Avenue du Colonel Roche, Toulouse F-31400, France
3 Université de Toulouse, 15 rue des Lois, Toulouse F-31400, France
Nanoscale Research Letters 2014, 9:19 doi:10.1186/1556-276X-9-19Published: 13 January 2014
The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffraction (HR-XRD). The results are well interpreted by carrier trapping and recombination mechanisms involving the Bi-related localized levels. Clear distinction between the localized and delocalized regime was observed in the spectral and temporal photoluminescence emission.