Possibility of graphene growth by close space sublimation
1 V. Ye. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Prospect Nauky, Kyiv 03028, Ukraine
2 G. V. Kurdyumov Institute for Metal Physics, National Academy of Sciences of Ukraine, 36 Vernadsky Blvd, Kyiv 03680, Ukraine
Nanoscale Research Letters 2014, 9:182 doi:10.1186/1556-276X-9-182Published: 14 April 2014
Carbon films on the Si/SiO2 substrate are fabricated using modified method of close space sublimation at atmospheric pressure. The film properties have been characterized by micro-Raman and X-ray photoelectron spectroscopy and monochromatic ellipsometry methods. Ellipsometrical measurements demonstrated an increase of the silicon oxide film thickness in the course of manufacturing process. The XPS survey spectra of the as-prepared samples indicate that the main elements in the near-surface region are carbon, silicon, and oxygen. The narrow-scan spectra of C1s, Si2p, O1s regions indicate that silicon and oxygen are mainly in the SiOx (x ≈ 2) oxide form, whereas the main component of C1s spectrum at 284.4 eV comes from the sp2-hybridized carbon phase. Micro-Raman spectra confirmed the formation of graphene films with the number of layers that depended on the distance between the graphite source and substrate.