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Surface scattering mechanisms of tantalum nitride thin film resistor

Huey-Ru Chen1, Ying-Chung Chen1*, Ting-Chang Chang2*, Kuan-Chang Chang3, Tsung-Ming Tsai3, Tian-Jian Chu3, Chih-Cheng Shih3, Nai-Chuan Chuang4 and Kao-Yuan Wang4

Author Affiliations

1 Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

2 Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

3 Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

4 R&D Department, Walsin Technology Co, Kaohsiung 806, Taiwan

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Nanoscale Research Letters 2014, 9:177  doi:10.1186/1556-276X-9-177

Published: 11 April 2014


In this letter, we utilize an electrical analysis method to develop a TaN thin film resistor with a stricter spec and near-zero temperature coefficient of resistance (TCR) for car-used electronic applications. Simultaneously, we also propose a physical mechanism mode to explain the origin of near-zero TCR for the TaN thin film resistor (TFR). Through current fitting, the carrier conduction mechanism of the TaN TFR changes from hopping to surface scattering and finally to ohmic conduction for different TaN TFRs with different TaN microstructures. Experimental data of current–voltage measurement under successive increasing temperature confirm the conduction mechanism transition. A model of TaN grain boundary isolation ability is eventually proposed to influence the carrier transport in the TaN thin film resistor, which causes different current conduction mechanisms.

TaN; Thin film resistor; Temperature coefficient of resistance; Surface scattering