Surface scattering mechanisms of tantalum nitride thin film resistor
1 Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan
2 Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan
3 Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan
4 R&D Department, Walsin Technology Co, Kaohsiung 806, Taiwan
Nanoscale Research Letters 2014, 9:177 doi:10.1186/1556-276X-9-177Published: 11 April 2014
In this letter, we utilize an electrical analysis method to develop a TaN thin film resistor with a stricter spec and near-zero temperature coefficient of resistance (TCR) for car-used electronic applications. Simultaneously, we also propose a physical mechanism mode to explain the origin of near-zero TCR for the TaN thin film resistor (TFR). Through current fitting, the carrier conduction mechanism of the TaN TFR changes from hopping to surface scattering and finally to ohmic conduction for different TaN TFRs with different TaN microstructures. Experimental data of current–voltage measurement under successive increasing temperature confirm the conduction mechanism transition. A model of TaN grain boundary isolation ability is eventually proposed to influence the carrier transport in the TaN thin film resistor, which causes different current conduction mechanisms.