Table 1

The growth parameters and results of the ITO and TiO2 film deposition on the Si substrate
Target ITO 99.99% TiO2 99.99%
Target diameter 7.6 cm 7.6 cm
Distance from substrate 10 cm 10 cm
Substrate Si Si
Substrate temperature 30°C 35°C
Ultimate pressure 2.68 × 10-5 mbar 2.97 × 10-5 mbar
Vacuum (plasma) pressure 7.41 × 10-3 mbar 6.75 × 10-3 mbar
Gas Ar 99.99% Ar 99.99%
RF sputtering power 200 W 200 W
Deposition rate 2.1 Å · s-1 0.5 Å · s-1
Deposition time 5 min 19 min
Required thickness 60 to 64 nm 55 to 60 nm
Crystalline size 0.229 nm 0.223 nm
n (λ = 500 nm) 1.97 2.2

Ali et al.

Ali et al. Nanoscale Research Letters 2014 9:175   doi:10.1186/1556-276X-9-175

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