Enhanced light absorption of amorphous silicon thin film by substrate control and ion irradiation
Key Laboratory of Advanced Materials, School of Material Science and Engineering, Tsinghua University, Beijing 100084, China
Nanoscale Research Letters 2014, 9:173 doi:10.1186/1556-276X-9-173Published: 9 April 2014
Large-area periodically aligned silicon nanopillar (PASiNP) arrays were fabricated by magnetic sputtering with glancing angle deposition (GLAD) on substrates coated by a monolayer of close-packed polystyrene (PS) nanospheres. The structure of PASiNP arrays could be manipulated by changing the diameter of PS nanospheres. Enhanced light absorptance within a wavelength range from 300 to 1,000 nm was observed as the diameter of nanopillars and porosity of PASiNP arrays increased. Meanwhile, Xe ion irradiation with dose from 1 × 1014 to 50 × 1014 ions/cm2 was employed to modify the surface morphology and top structure of thin films, and the effect of the irradiation on the optical bandgap was discussed.
81.15.Cd; 78.66.Jg; 61.80.Jh