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Enhanced light absorption of amorphous silicon thin film by substrate control and ion irradiation

Fangda Yuan, Zhengcao Li*, Tianci Zhang, Wei Miao and Zhengjun Zhang

Author Affiliations

Key Laboratory of Advanced Materials, School of Material Science and Engineering, Tsinghua University, Beijing 100084, China

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Nanoscale Research Letters 2014, 9:173  doi:10.1186/1556-276X-9-173

Published: 9 April 2014


Large-area periodically aligned silicon nanopillar (PASiNP) arrays were fabricated by magnetic sputtering with glancing angle deposition (GLAD) on substrates coated by a monolayer of close-packed polystyrene (PS) nanospheres. The structure of PASiNP arrays could be manipulated by changing the diameter of PS nanospheres. Enhanced light absorptance within a wavelength range from 300 to 1,000 nm was observed as the diameter of nanopillars and porosity of PASiNP arrays increased. Meanwhile, Xe ion irradiation with dose from 1 × 1014 to 50 × 1014 ions/cm2 was employed to modify the surface morphology and top structure of thin films, and the effect of the irradiation on the optical bandgap was discussed.

PACS code

81.15.Cd; 78.66.Jg; 61.80.Jh