Fast anodization fabrication of AAO and barrier perforation process on ITO glass
1 Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 DongChuan Road, 200240 Shanghai, China
2 School of Chemistry & Chemical Technology, Shanghai Jiao Tong University, 800 DongChuan Road, 200240 Shanghai, China
Nanoscale Research Letters 2014, 9:159 doi:10.1186/1556-276X-9-159Published: 3 April 2014
Thin films of porous anodic aluminum oxide (AAO) on tin-doped indium oxide (ITO) substrates were fabricated through evaporation of a 1,000- to 2,000-nm-thick Al, followed by anodization with different durations, electrolytes, and pore widening. A faster method to obtain AAO on ITO substrates has been developed, which with 2.5 vol.% phosphoric acid at a voltage of 195 V at 269 K. It was found that the height of AAO films increased initially and then decreased with the increase of the anodizing time. Especially, the barrier layers can be removed by extending the anodizing duration, which is very useful for obtaining perforation AAO and will broaden the application of AAO on ITO substrates.