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Quantum dot cascade laser

Ning Zhuo, Feng Qi Liu*, Jin Chuan Zhang, Li Jun Wang, Jun Qi Liu, Shen Qiang Zhai and Zhan Guo Wang

Author Affiliations

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China

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Nanoscale Research Letters 2014, 9:144  doi:10.1186/1556-276X-9-144

Published: 25 March 2014


We demonstrated an unambiguous quantum dot cascade laser based on InGaAs/GaAs/InAs/InAlAs heterostructure by making use of self-assembled quantum dots in the Stranski-Krastanow growth mode and two-step strain compensation active region design. The prototype generates stimulated emission at λ ~ 6.15 μm and a broad electroluminescence band with full width at half maximum over 3 μm. The characteristic temperature for the threshold current density within the temperature range of 82 to 162 K is up to 400 K. Moreover, our materials show the strong perpendicular mid-infrared response at about 1,900 cm-1. These results are very promising for extending the present laser concept to terahertz quantum cascade laser, which would lead to room temperature operation.


42.55.Px; 78.55.Cr; 78.67.Hc