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Negative differential resistance and carrier transport of electrically bistable devices based on poly(N-vinylcarbazole)-silver sulfide composites

Jiantao Li12, Aiwei Tang13*, Xu Li12, Yapeng Cao12, Miao Wang3, Yu Ning12, Longfeng Lv12, Qipeng Lu12, Yunzhang Lu12, Yufeng Hu12, Yanbing Hou12 and Feng Teng12*

Author Affiliations

1 Key laboratory of Luminescence and Optical Information, Ministry of Education, School of Science, Beijing JiaoTong University, Beijing 100044, China

2 Institute of Optoelectronic Technology, Beijing JiaoTong University, Beijing 100044, China

3 Department of Chemistry, School of Science, Beijing JiaoTong University, Beijing 100044, China

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Nanoscale Research Letters 2014, 9:128  doi:10.1186/1556-276X-9-128

Published: 19 March 2014

Abstract

An electrically bistable device has been fabricated based on poly(N-vinylcarbazole) (PVK)-silver sulfide (Ag2S) composite films using a simple spin-coating method. Current–voltage (I-V) characteristics of the as-fabricated devices exhibit a typical electrical bistability and negative differential resistance (NDR) effect. The NDR effect can be tuned by varying the positive charging voltage and the charging time. The maximum current ratio between the high-conducting state (ON state) and low-conducting state (OFF state) can reach up to 104. The carrier transport mechanisms in the OFF and ON states are described by using different models on the basis of the experimental result.

Keywords:
Bistable device; Ag2S nanocrystals; PVK; NDR effects; Charge trapping