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Vapour-liquid-solid growth of ternary Bi2Se2Te nanowires

Piet Schönherr12, Liam J Collins-McIntyre1, ShiLei Zhang1, Patryk Kusch2, Stephanie Reich2, Terence Giles3, Dominik Daisenberger3, Dharmalingam Prabhakaran1 and Thorsten Hesjedal13*

Author Affiliations

1 Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, UK

2 Fachbereich Physik, Freie Universität Berlin, Arnimallee 14, Berlin 14195, Germany

3 Diamond Light Source, Chilton, Didcot OX11 0DE, UK

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Nanoscale Research Letters 2014, 9:127  doi:10.1186/1556-276X-9-127

Published: 18 March 2014


High-density growth of single-crystalline Bi2Se2Te nanowires was achieved via the vapour-liquid-solid process. The stoichiometry of samples grown at various substrate temperatures is precisely determined based on energy-dispersive X-ray spectroscopy, X-ray diffraction, and Raman spectroscopy on individual nanowires. We discuss the growth mechanism and present insights into the catalyst-precursor interaction.

Nanowires; Topological insulators; VLS growth; Raman spectroscopy