Long pulse endurance and good data retention. (a) Long read pulse endurance of >105 cycles and (b) good data retention of >104 s with a good resistance ratio of >102 at 85°C are obtained at a low CC of 80 μA. (c) Program/erase endurance of >1,000 cycles with a pulse width of 500 μs.
Prakash et al. Nanoscale Research Letters 2014 9:125 doi:10.1186/1556-276X-9-125