Figure 6.

Differentiated counts with respect to kinetic energy (dC/dE). AES spectra vs. kinetic energy for pristine and after-switching RRAM devices. The spectra are from a typical via size of 0.4 × 0.4 μm2 and measured inside the middle of via regions (open blue square symbols for pristine and yellow solid triangle symbols for switched devices). An oxygen-deficient TaOx layer is observed after few switching cycles, confirming oxygen-deficient TaOx filament formation after SET.

Prakash et al. Nanoscale Research Letters 2014 9:125   doi:10.1186/1556-276X-9-125
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