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Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing

Hajer Makhloufi126, Poonyasiri Boonpeng126, Simone Mazzucato36, Julien Nicolai46, Alexandre Arnoult16, Teresa Hungria56, Guy Lacoste16, Christophe Gatel46, Anne Ponchet46, Hélène Carrère36, Xavier Marie36 and Chantal Fontaine16*

Author Affiliations

1 CNRS, LAAS, 7, avenue du Colonel Roche, Toulouse 31400, France

2 Université Paul Sabatier, 118 route de Narbonne, Toulouse 31400, France

3 Université de Toulouse, LPCNO, INSA-UPS-CNRS, 135 avenue de Rangueil, Toulouse 31400, France

4 CNRS-CEMES, 29, rue Jeanne Marvig, Toulouse 31400, France

5 Service Analyseur ionique, INSA, 135 avenue de Rangueil, Toulouse 31400, France

6 Université de Toulouse, Toulouse 31400, France

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Nanoscale Research Letters 2014, 9:123  doi:10.1186/1556-276X-9-123

Published: 17 March 2014


We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows that the quantum well emission, peaking at 1.23 μm at room temperature, can be improved by a rapid annealing at 650°C, while the use of a higher annealing temperature leads to emission degradation and blue-shifting due to the activation of non-radiative centers and bismuth diffusion from the quantum well.

Dilute bismides; Molecular beam epitaxy; Heteroepitaxy; X-ray diffraction; Transmission electron microscopy; Photoluminescence