Atomic arrangement, interface interaction, and O2 diffusion mechanism. (a) Atomic arrangement within ZnO NWs and interface interaction with Cu substrate. (b) O2 diffusion mechanism to the Cu substrate due to shift in bond alignment and reconstruction of bonds after UHV thermal annealing treatment.
Shrama et al. Nanoscale Research Letters 2014 9:122 doi:10.1186/1556-276X-9-122