Electrochemically deposited gallium oxide nanostructures on silicon substrates
1 Malaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia, Jalan Semarak, Kuala Lumpur 54100, Malaysia
2 Faculty of Electrical Engineering, Universiti Teknologi MARA, Shah Alam, Selangor 40450, Malaysia
3 Department of Electrical Engineering, Nagaoka University of Technology, Kamitomioka-machi, Nagaoka, Niigata 940-2137, Japan
4 MIMOS Berhad, Technology Park Malaysia, Kuala Lumpur 57000, Malaysia
Nanoscale Research Letters 2014, 9:120 doi:10.1186/1556-276X-9-120Published: 17 March 2014
We report a synthesis of β-Ga2O3 nanostructures on Si substrate by electrochemical deposition using a mixture of Ga2O3, HCl, NH4OH, and H2O. The presence of Ga3+ ions contributed to the deposition of Ga2O3 nanostructures on the Si surface with the assistance of applied potentials. The morphologies of the grown structures strongly depended on the molarity of Ga2O3 and pH level of electrolyte. β-Ga2O3 nanodot-like structures were grown on Si substrate at a condition with low molarity of Ga2O3. However, Ga2O3 nanodot structures covered with nanorods on top of their surfaces were obtained at higher molarity, and the densities of nanorods seem to increase with the decrease of pH level. High concentration of Ga3+ and OH- ions may promote the reaction of each other to produce Ga2O3 nanorods in the electrolyte. Such similar nature of Ga2O3 nanorods was also obtained by using hydrothermal process. The grown structures seem to be interesting for application in electronic and optoelectronic devices as well as to be used as a seed structure for subsequent chemical synthesis of GaN by thermal transformation method.