Figure 9.

AC endurance and data retention characteristics. (a) Good AC endurance of more than 10,000 in every cycle of cross-point resistive switching memory device. Both resistances were read out at +0.2 V. (b) Good data retention characteristics of >104 s is obtained.

Jana et al. Nanoscale Research Letters 2014 9:12   doi:10.1186/1556-276X-9-12
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