Figure 7.

Self-compliance I-V switching characteristics and fitting. (a) Self-compliance Repeatable I-V hysteresis loop of our IrOx/GdOx/W cross-point memory devices. A low operation voltage of ±3 V is applied to get repeatable resistive switching characteristics. (b) Fitted I-V curve in a log-log scale. Both LRS and HRS show trap-controlled space charge-limited current conduction mechanism.

Jana et al. Nanoscale Research Letters 2014 9:12   doi:10.1186/1556-276X-9-12
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