Figure 6.

I-V switching characteristics and mechanism. (a)I-V characteristics for formation process and bipolar resistive switching characteristics of the via-hole devices, (b)I-V fitting, (c) oxygen vacancy filament formation under - V < VSET, and (d) filament ruptured or oxidized under + V > VRESET.

Jana et al. Nanoscale Research Letters 2014 9:12   doi:10.1186/1556-276X-9-12
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