Figure 4.

Pattern before and after annealing. Grid pattern generated in a 90-nm-thick SiOx film at 248-nm laser wavelength: (a) 185 mJ/cm2, before annealing; (b) 210 mJ/cm2, after oxidation to SiO2 by high-temperature annealing (1,273 K, 16 h).

Ihlemann and Weichenhain-Schriever Nanoscale Research Letters 2014 9:102   doi:10.1186/1556-276X-9-102
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