Figure 3.

Fluence dependence of the structure formation. Intensity distribution in the sample plane (a, f) (contrast enhanced for clarity) and corresponding patterns in 150-nm-thick SiOx films obtained with single pulses of varying fluences at 248 nm, mask period 40 μm (b to e), and mask period 20 μm (g to k).

Ihlemann and Weichenhain-Schriever Nanoscale Research Letters 2014 9:102   doi:10.1186/1556-276X-9-102
Download authors' original image