Figure 5.

Transfer characteristics of back-gated MoS2 transistor (a) and device transconductance versus gate voltage (b). (a) Transfer characteristics of MoS2 transistor at room temperature for the VDS value of 1 V on logarithmic (left axis) and linear scales (right axis). (b) Device transconductance gm (defined as gm = dIDS/dVGS) versus gate voltage VGS at VDS = 1 V.

Gu et al. Nanoscale Research Letters 2014 9:100   doi:10.1186/1556-276X-9-100
Download authors' original image