Figure 4.

The current–voltage behavior of back-gated MoS2 transistor. (a) Gate current IGS versus gate voltage VGS behavior of back-gated MoS2 transistor at room temperature for the drain voltage VDS value of 5 V. (b) Output characteristics of back-gated MoS2 transistors at room temperature for VGS values of 0, 5, 10, 15, and 20 V.

Gu et al. Nanoscale Research Letters 2014 9:100   doi:10.1186/1556-276X-9-100
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