Figure 1.

Schematic view of experimental setup and MoS2 nanodisc-based back-gated FET. (a) Schematic view of the experimental setup of CVD. (b) MoS2 FET with 50-nm-thick Ni as contact electrodes together with electrical connections. The channel is the MoS2 nanodiscs, and 280-nm SiO2 serves as gate dielectric. The length and width of the channel are 1.5 and 5 μm, respectively.

Gu et al. Nanoscale Research Letters 2014 9:100   doi:10.1186/1556-276X-9-100
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