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Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors

Weixia Gu, Jiaoyan Shen and Xiying Ma*

Author Affiliations

School of Mathematics and Physics, Suzhou University of Science and Technology, 1# Kerui Road, Suzhou, Jiangsu 215009, China

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Nanoscale Research Letters 2014, 9:100  doi:10.1186/1556-276X-9-100

Published: 28 February 2014

Abstract

Two-dimensional (2D) molybdenum disulfide (MoS2) is an attractive alternative semiconductor material for next-generation low-power nanoelectronic applications, due to its special structure and large bandgap. Here, we report the fabrication of large-area MoS2 nanodiscs and their incorporation into back-gated field effect transistors (FETs) whose electrical properties we characterize. The MoS2 nanodiscs, fabricated via chemical vapor deposition (CVD), are homogeneous and continuous, and their thickness of around 5 nm is equal to a few layers of MoS2. In addition, we find that the MoS2 nanodisc-based back-gated field effect transistors with nickel electrodes achieve very high performance. The transistors exhibit an on/off current ratio of up to 1.9 × 105, and a maximum transconductance of up to 27 μS (5.4 μS/μm). Moreover, their mobility is as high as 368 cm2/Vs. Furthermore, the transistors have good output characteristics and can be easily modulated by the back gate. The electrical properties of the MoS2 nanodisc transistors are better than or comparable to those values extracted from single and multilayer MoS2 FETs.

Keywords:
Molybdenum disulfide; CVD; Field effect transistors; Mobility