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Prepare dispersed CIS nano-scale particles and spray coating CIS absorber layers using nano-scale precursors

Jian-Chiun Liou1, Chien-Chen Diao2, Jing-Jenn Lin3, Yen-Lin Chen4 and Cheng-Fu Yang4*

Author Affiliations

1 Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan

2 Department of Electronic Engineering, Kao Yuan University, Kaohsiung 82151, Taiwan

3 Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 54561, Taiwan

4 Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 82151, Taiwan

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Nanoscale Research Letters 2014, 9:1  doi:10.1186/1556-276X-9-1

Published: 1 January 2014


In this study, the Mo-electrode thin films were deposited by a two-stepped process, and the high-purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by hydrothermal process by Nanowin Technology Co. Ltd. From the X-ray pattern of the CIS precursor, the mainly crystalline phase was CIS, and the almost undetectable CuSe phase was observed. Because the CIS powder was aggregated into micro-scale particles and the average particle sizes were approximately 3 to 8 μm, the CIS power was ground into nano-scale particles, then the 6 wt.% CIS particles were dispersed into isopropyl alcohol to get the solution for spray coating method. Then, 0.1 ml CIS solution was sprayed on the 20 mm × 10 mm Mo/glass substrates, and the heat treatment for the nano-scale CIS solution under various parameters was carried out in a selenization furnace. The annealing temperature was set at 550°C, and the annealing time was changed from 5 to 30 min, without extra Se content was added in the furnace. The influences of annealing time on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.

Nano-scale particle; Spray coating method; CIS absorber layer; Annealing