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Blue light emission from the heterostructured ZnO/InGaN/GaN

Ti Wang, Hao Wu*, Zheng Wang, Chao Chen and Chang Liu*

Author affiliations

Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, People's Republic of China

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Citation and License

Nanoscale Research Letters 2013, 8:99  doi:10.1186/1556-276X-8-99

Published: 22 February 2013


ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a blue emission accompanied by a broad peak centered at 600 nm. With appropriate emission intensity ratio, the heterostructured LEDs had potential application in white LEDs. Moreover, a UV emission and an emission peak centered at 560 nm were observed under reverse bias.

ZnO/InGaN/GaN heterostructures; Atomic layer deposition; Electroluminescence; 77.55.hf; 73.63.Bd; 73.40.Kp