Figure 5.

The behavior of the TiN/HfO2/Al2O3/ITO/PET memory cell under different pulses. HRS and LRS are read at 0.1 V, and the set and reset operations of the devices were achieved with different pulsing widths at ±5 V.

Fang et al. Nanoscale Research Letters 2013 8:92   doi:10.1186/1556-276X-8-92
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