Figure 3.

The typical resistive switching current–voltage curve of NbAlO-based RRAM device at different environmental temperatures. (a) 80, (b) 120, (c) 160, and (d) 200 K. The inset in (c) shows the schematic diagram of measured device structure and configuration. The I-V curve in different color indicates different resistive switching cycles.

Zhou et al. Nanoscale Research Letters 2013 8:91   doi:10.1186/1556-276X-8-91
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