Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition
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Nanoscale Research Letters 2013, 8:91 doi:10.1186/1556-276X-8-91Published: 19 February 2013
The RESET process of NbAlO-based resistive switching memory devices fabricated by atomic layer deposition is investigated at low temperatures from 80 to 200 K. We observed that the conduction mechanism of high resistance state changed from hopping conduction to Frenkel-Poole conduction with elevated temperature. It is found that the conductive filament rupture in RRAM RESET process can be attributed not only to the Joule heat generated by internal current flow through a filament but also to the charge trap/detrapping effect. The RESET current decreases upon heating. Meanwhile, the energy consumption also decreases exponentially. This phenomenon indicates the temperature-related charge trap/detrapping process which contributes to the RESET besides direct Joule heat.