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In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots

Mi-Feng Li*, Ying Yu, Ji-Fang He, Li-Juan Wang, Yan Zhu, Xiang-jun Shang, Hai-Qiao Ni and Zhi-Chuan Niu*

Author Affiliations

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China

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Nanoscale Research Letters 2013, 8:86  doi:10.1186/1556-276X-8-86

Published: 18 February 2013


A method to improve the growth repeatability of low-density InAs/GaAs self-assembled quantum dots by molecular beam epitaxy is reported. A sacrificed InAs layer was deposited firstly to determine in situ the accurate parameters of two- to three-dimensional transitions by observation of reflection high-energy electron diffraction patterns, and then the InAs layer annealed immediately before the growth of the low-density InAs quantum dots (QDs). It is confirmed by micro-photoluminescence that control repeatability of low-density QD growth is improved averagely to about 80% which is much higher than that of the QD samples without using a sacrificed InAs layer.

InAs quantum dots; Sacrificed InAs layer; Molecular beam epitaxy; Reflection high-energy electron diffraction; Micro-photoluminescence; Low density; 78.67.Hc; 78.55.Cr; 78.55.-m