Comparative study of initial stages of copper immersion deposition on bulk and porous silicon
1 Department of Micro- and Nanoelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka St., 220013, Minsk, Belarus
2 Department of Telecommunications, Belarusian State University of Informatics and Radioelectronics, 6 Brovka St., 220013, Minsk, Belarus
3 CNR-SPIN Salerno and Dipartimento di Fisica ‘E.R. Caianiello’, Università degli Studi di Salerno, I-84084, Fisciano, Salerno, Italy
4 Department of Information Engineering, Electronics and Telecommunications, University ‘Sapienza’, 18 Eudossiana St., 00184, Rome, Italy
Nanoscale Research Letters 2013, 8:85 doi:10.1186/1556-276X-8-85Published: 15 February 2013
Initial stages of Cu immersion deposition in the presence of hydrofluoric acid on bulk and porous silicon were studied. Cu was found to deposit both on bulk and porous silicon as a layer of nanoparticles which grew according to the Volmer-Weber mechanism. It was revealed that at the initial stages of immersion deposition, Cu nanoparticles consisted of crystals with a maximum size of 10 nm and inherited the orientation of the original silicon substrate. Deposited Cu nanoparticles were found to be partially oxidized to Cu2O while CuO was not detected for all samples. In contrast to porous silicon, the crystal orientation of the original silicon substrate significantly affected the sizes, density, and oxidation level of Cu nanoparticles deposited on bulk silicon.