|
Resolution: standard / high Figure 6.
Typical I-V characteristics of the memory cell. The bistable memory device using SiNWs for the storage medium shows a hysteresis
of 0.96 nA (red), while the reference sample (amorphous Si) shows an insignificant
hysteresis (black).
Gabrielyan et al. Nanoscale Research Letters 2013 8:83 doi:10.1186/1556-276X-8-83 |
