Figure 6.

Typical I-V characteristics of the memory cell. The bistable memory device using SiNWs for the storage medium shows a hysteresis of 0.96 nA (red), while the reference sample (amorphous Si) shows an insignificant hysteresis (black).

Gabrielyan et al. Nanoscale Research Letters 2013 8:83   doi:10.1186/1556-276X-8-83
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