Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer
1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China
2 Division of Nuclear Materials Science and Engineering, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, 2019 Jialuo Road, Jiading District, Shanghai, 201800, China
3 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
Citation and License
Nanoscale Research Letters 2013, 8:77 doi:10.1186/1556-276X-8-77Published: 15 February 2013
A phase change memory (PCM) cell with atomic layer deposition titanium dioxide bottom heating layer is investigated. The crystalline titanium dioxide heating layer promotes the temperature rise in the AlSb3Te layer which causes the reduction in the reset voltage compared to a conventional phase change memory cell. The improvement in thermal efficiency of the PCM cell mainly originates from the low thermal conductivity of the crystalline titanium dioxide material. Among the various thicknesses of the TiO2 buffer layer, 4 nm was the most appropriate thickness that maximized the improvement with negligible sacrifice of the other device performances, such as the reset/set resistance ratio, voltage window, and endurance.