Figure 2.

I-V curves and resistance switching behavior of the Ni/PCMO/Pt device. I-V curves in the (a) initial state and (b) high and low resistance states of the Ni/PCMO/Pt device. The inset magnifies the behavior near the origin. (c) Resistance switching behavior of the Ni/PCMO/Pt device.

Nakamura et al. Nanoscale Research Letters 2013 8:76   doi:10.1186/1556-276X-8-76
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