Table 1 |
|||
| Water contact angles, height/bias dependence, and correlation coefficient for oxidation on different Si surfaces | |||
| Surface termination | Contact angle of water droplet (°) | Slope (nm V−1) | Correlation coefficient (adjusted R2) |
| Si(OH) native oxide layer | 29 ± 0.9 | 0.40 ± 0.04 | 0.92 |
| Si(H)a | 81 ± 1.2 | 0.37 ± 0.01 | 0.99 |
| Si(CH3)b | 89 ± 0.8 | 0.48 ± 0.04 | 0.95 |
Data in Figure 4 have been used for linear fitting. At a constant writing speed (1 μm s−1), an increase of 1 V in bias produce a height increase of approximately 0.4 nm; a30 s in aqueous HF 5 wt.%; bhexamethyldisilizane vapors for 1 h in moderate vacuum.
Lorenzoni et al. Nanoscale Research Letters 2013 8:75 doi:10.1186/1556-276X-8-75
