Table 1

Water contact angles, height/bias dependence, and correlation coefficient for oxidation on different Si surfaces
Surface termination Contact angle of water droplet (°) Slope (nm V−1) Correlation coefficient (adjusted R2)
Si(OH) native oxide layer 29 ± 0.9 0.40 ± 0.04 0.92
Si(H)a 81 ± 1.2 0.37 ± 0.01 0.99
Si(CH3)b 89 ± 0.8 0.48 ± 0.04 0.95

Data in Figure 4 have been used for linear fitting. At a constant writing speed (1 μm s−1), an increase of 1 V in bias produce a height increase of approximately 0.4 nm; a30 s in aqueous HF 5 wt.%; bhexamethyldisilizane vapors for 1 h in moderate vacuum.

Lorenzoni et al.

Lorenzoni et al. Nanoscale Research Letters 2013 8:75   doi:10.1186/1556-276X-8-75

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