Figure 7.

Example of finalized prototype. (a) AFM topography of multiple line pattern written at a 2-μm s−1 speed and a bias of 12 V used as mask for an 8-s etching in SF6 plasma; on the right, the height profiles before RIE (black) and after RIE (red). (b, c) SEM images showing the finalized result of fabrication; in the details, the effective size and section of features are available. (d) AFM topography of a finalized Si prototype; Al microfeatures are connected to nanofeatures deposited by SPL. Profile 1 shows the obtained section, and section 2 shows the junction profile (no gap is observed).

Lorenzoni et al. Nanoscale Research Letters 2013 8:75   doi:10.1186/1556-276X-8-75
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