Figure 3.

Example of continuous patterns by oxidation or carbon deposition. (a) AFM topography and height profiles of a grid with 750-nm spacing (−10-V tip bias, 5-μm s−1 writing speed) showing features with FWHM = 68 nm on Si(H). The points where two lines cross (red profile) show a slight increase in height (0.2 to 0.3 nm). (b) Parallel carbonaceous lines with 350-nm spacing (19-V tip bias and 1-μm s−1 writing speed). Average line height ≈ 0.5 nm, single feature FWHM = 57 nm. (c) Single carbonaceous spots deposited with a pulse of 0.5 s at increasing voltage; spot's height (>50 nm) is considerably higher if compared to oxidized spots (data not shown).

Lorenzoni et al. Nanoscale Research Letters 2013 8:75   doi:10.1186/1556-276X-8-75
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