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Electronic structure modulation for low-power switching

Hassan Raza

Author affiliations

Department of Electrical and Computer Engineering, University of Iowa, Iowa City, IA, 52242, USA

Citation and License

Nanoscale Research Letters 2013, 8:74  doi:10.1186/1556-276X-8-74

Published: 13 February 2013


We report the transport characteristics of a novel transistor based on the electronic structure modulation of the channel. The gate voltage-controlled current modulation arises from the bandwidth manipulation of a midgap or a near-midgap state. We show that the transistor exhibits a gain and overcomes the 2.3 kBT/decade thermal limit in the inverse subthreshold slope where kB is the Boltzmann constant. The unique device physics also opens up many novel applications.

Electronic structure modulation; Graphene; Transistor; Electric field; Subthreshold slope; Gain