|Feature etch depth using SF6/CHF3|
|PAA layer thickness (nm)||Etching time (s)|
|390 (non-annealed)||32 nm||45 nm||20 nm (lower due to partially etched walls)|
|400 (annealed)||28 nm||45 nm||56 nm|
|560 (annealed)||16 nm||23 nm||45 nm|
Feature etch depth on nanopatterned Si surface through a PAA layer for three different PAA layer thicknesses and three different etching times. The first PAA layer was 390-nm thick, and no Al annealing was used before PAA formation. The two other layers were 400- and 560-nm thick, respectively, and an annealing step at 500°C for 30 min was applied to the Al film before anodization.
Gianneta et al.
Gianneta et al. Nanoscale Research Letters 2013 8:71 doi:10.1186/1556-276X-8-71