Table 3

Feature etch depth using SF6/CHF3
PAA layer thickness (nm) Etching time (s)
20 40 60
390 (non-annealed) 32 nm 45 nm 20 nm (lower due to partially etched walls)
400 (annealed) 28 nm 45 nm 56 nm
(maximum) (maximum) (maximum)
560 (annealed) 16 nm 23 nm 45 nm
(maximum) (maximum) (maximum)

Feature etch depth on nanopatterned Si surface through a PAA layer for three different PAA layer thicknesses and three different etching times. The first PAA layer was 390-nm thick, and no Al annealing was used before PAA formation. The two other layers were 400- and 560-nm thick, respectively, and an annealing step at 500°C for 30 min was applied to the Al film before anodization.

Gianneta et al.

Gianneta et al. Nanoscale Research Letters 2013 8:71   doi:10.1186/1556-276X-8-71

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