Table 2

Etch rate of Si through an Al mask compared to a SiO2 mask with large openings
Large area Si etch rate (nm/min) Etch rate through the PAA mask(pore diameter in the range of 35 to 45 nm) nm/min
SF6 700 140 – 180
SF6/O2 177 140 – 180
SF6/CHF3 170 65 – 85

Etch rate of Si through a large area (100 × 100 μm2) SiO2 mask and a 400-nm thick PAA mask with pore diameter in the range of 35 to 45 nm. The difference in the etch rate is attributed to the small size of the etching windows, which is equal to the pore diameter in the case of the alumina mask.

Gianneta et al.

Gianneta et al. Nanoscale Research Letters 2013 8:71   doi:10.1186/1556-276X-8-71

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