Figure 4.

I-V curves and M-S-M structure and its energy band diagram. (a) The almost symmetric I-V curve. The inset shows a representative FESEM image of InSb nanowire-based M-S-M structure. (b) Schematic diagram of the M-S-M structure and its equivalent circuit. (c) Energy band diagram of the M-S-M structure under applied voltage V. Φb1 and Φb2 are the corresponding Schottky barrier heights at the two contacts, and ζ is the distance between the bottom of the conductance band and the EF of the InSb nanowire. (d) The I-V curve of ln (I) versus V for InSb nanowire.

Kuo et al. Nanoscale Research Letters 2013 8:69   doi:10.1186/1556-276X-8-69
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