Figure 5.

AC dielectric constant and P-E hysteresis loop. (a) AC dielectric constant as a function of the DC bias voltage for a BTO thin film (150 nm) annealed at 700°C with a 7.2-nm-thick buffer layer. (b) P-E hysteresis loop measured at 1 KHz with an AC voltage swing of 10 V-PP for the BTO films annealed at 700°C with buffer layers of different thickness.

George et al. Nanoscale Research Letters 2013 8:62   doi:10.1186/1556-276X-8-62
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